Transphorm TP65H050G4WS is a Gallium Nitride (GaN) FET rated at 650V, 34A, 0.06Ω Rdson(max) in TO-247

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Transphorm
Manufacturer Package	TO-247 (Through Hole, 3 Pins, Thermalpad: Bottom WxL: 15.90 x 20.85mm²)
Configuration	Single Cascode
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	650
RDS(ON) typ, max [Ω]	0.05, 0.06 At VGS = 10V, TA = 25°C
ID max [A]	34
PD max [W]	119
QGS typ, max [nC]	6, na
QGD typ, max [nC]	5, na
QG Total typ, max [nC]	16, 24
RthJA max [C/W]	40
RthJC max [C/W]	1.05
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	5.1 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	10.2 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	31.5 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	3.1 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	119.0 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
650	Through Hole WxL: 15.80 x 21.00mm² # of Pins: 4 Thermalpad: Bottom	0.041	3.1, 3.9	46.5	156	42.7	14.7	14.7
650	Through Hole WxL: 15.90 x 20.85mm² # of Pins: 3 Thermalpad: Bottom	0.041	3.3, 4.8	55.7	192	24.5	8.4	6.6
650	Through Hole WxL: 15.88 x 21.13mm² # of Pins: 3 Thermalpad: Bottom	0.052	4, 6	54	326	51	19	11
650	Through Hole WxL: 15.88 x 21.13mm² # of Pins: 4 Thermalpad: Bottom	0.052	4, 6	54	326	43	19	11
650	Through Hole WxL: 15.80 x 21.00mm² # of Pins: 4 Thermalpad: Bottom	0.06	3.3, 4.8	35	132	24	6	5

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