Infineon FF1MR12MM1H_B11 is a Silicon Carbide (SiC) FET rated at 1200V, 500A, 0.00191Ω Rdson(max) in

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Infineon
Manufacturer Package	(, Pins, Thermalpad: None WxL: 0.00 x 0.00mm²)
Configuration	Single
Channel	N-Type
Material	Silicon Carbide (SiC)
BVDSS [V]	1200
RDS(ON) typ, max [Ω]	0.00175, na At VGS = 15V, TA = 25°C
ID max [A]	500
PD max [W]	0.02
QGS typ, max [nC]	na, na
QGD typ, max [nC]	na, na
QG Total typ, max [nC]	1600, na
RthJA max [C/W]	na
RthJC max [C/W]	0.082
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	57.2 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	631.7 (ideal heatsink, Silicon Carbide (SiC) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	na
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	1,524.4 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
1200	WxL: x mm² # of Pins: Thermalpad: None	0.00191	3.45, 5.15	500	0.02	1600
1200	WxL: x mm² # of Pins: Thermalpad: None	0.0022	3.45, 5.15	560		1600

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