Infineon FF4MR12W2M1H_B11 is a Silicon Carbide (SiC) FET rated at 1200V, 200A, 0.004Ω Rdson(typ) in AG-EASY2B

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Infineon
Manufacturer Package	AG-EASY2B (, Pins, Thermalpad: None WxL: 0.00 x 0.00mm²)
Configuration	Single
Channel	N-Type
Material	Silicon Carbide (SiC)
BVDSS [V]	1200
RDS(ON) typ, max [Ω]	0.004, na At VGS = 18V, TA = 25°C
ID max [A]	200
PD max [W]	0.02
QGS typ, max [nC]	na, na
QGD typ, max [nC]	na, na
QG Total typ, max [nC]	594, na
RthJA max [C/W]	na
RthJC max [C/W]	na
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	0.0 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	na
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	na
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	na

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
1200	WxL: x mm² # of Pins: Thermalpad: None	0.00382	4.15, 5.65	240	0.02	2050
1200	WxL: x mm² # of Pins: Thermalpad: None	0.0044	3.5, 5.1	280		800
1200	WxL: x mm² # of Pins: Thermalpad: None	0.005		507	1948	2440	730	705
1200	WxL: x mm² # of Pins: Thermalpad: None	0.005		460	1250	2.44	0.73	0.7

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