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Infineon GS-065-030-6-LR-TR is a Gallium Nitride (GaN) FET rated at 700V, 40A, 0.054Ω Rdson(max) in PDFN(8x8)

Datasheet


Device Parameter Value feedback*
Manufacturer Name Infineon
Manufacturer Package PDFN(8x8)
(Surface Mount, 8 Pins,
Thermalpad: Bottom
WxL: 8.00 x 8.00mm2)
Configuration Single
Channel N-Type
Material Gallium Nitride (GaN)
BVDSS [V] 700
RDS(ON) typ, max [Ω] 0.037, 0.054
At VGS = 6V, TA = 25°C
ID max [A] 40
PD max [W] na
QGS typ, max [nC] 1.9, na
QGD typ, max [nC] 2.3, na
QG Total typ, max [nC] 6.7, na
RthJA max [C/W] 34
RthJC max [C/W] 0.49
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=150°C, TA=25°C 		5.8 (conservative)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 10.8 (realistic)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=150°C, TC=25°C 		48.6 (ideal heatsink, Gallium Nitride (GaN) limit)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=150°C, TA=25°C 		3.7 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C 12.5 (realistic)
PD [W] Calc. @RthJC max
TJ=150°C, TC=25°C 		255.1 (ideal heatsink)

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650 Surface Mount
WxL: 8.00 x 8.00mm2
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