Infineon IMT65R010M2H is a Silicon Carbide (SiC) FET rated at 650V, 168A, 0.0131Ω Rdson(max) in PG-HSOF-8

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Infineon
Manufacturer Package	PG-HSOF-8 (Surface Mount, 8 Pins, Thermalpad: Bottom WxL: 9.80 x 11.68mm²)
Configuration	Single
Channel	N-Type
Material	Silicon Carbide (SiC)
BVDSS [V]	650
RDS(ON) typ, max [Ω]	0.013, na At VGS = 15V, TA = 25°C
ID max [A]	168
PD max [W]	681
QGS typ, max [nC]	29, na
QGD typ, max [nC]	21, na
QG Total typ, max [nC]	113, na
RthJA max [C/W]	na
RthJC max [C/W]	0.22
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=175°C, TA=25°C	na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	21.4 (realistic) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=175°C, TC=25°C	144.3 (ideal heatsink, Silicon Carbide (SiC) limit) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=175°C, TA=25°C	na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C	na
PD [W] Calc. @RthJC max TJ=175°C, TC=25°C	681.8 (ideal heatsink)

We found 2 products that are actively under promotion and similar to this product from 2 manufacturers.

BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
650	Surface Mount WxL: 9.90 x 11.73mm² # of Pins: 8 Thermalpad: Bottom	0.012	1.9, 3.5	173	395	256	100	28
600	Surface Mount WxL: 9.80 x 11.68mm² # of Pins: 8 Thermalpad: Bottom	0.016	3.7, 4.7	142	694	171	45	61

Additional Resources