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Infineon IMWH170R1K0M1 is a Silicon Carbide (SiC) FET rated at 1700V, 5.4A, 0.88Ω Rdson(max) in PG-TO247-3



Device Parameter Value feedback*
Manufacturer Name Infineon
Manufacturer Package PG-TO247-3
(Through Hole, 3 Pins,
Thermalpad: Bottom
WxL: 15.94 x 20.95mm2)
Configuration Single
Channel N-Type
Material Silicon Carbide (SiC)
BVDSS [V] 1700
RDS(ON) typ, max [Ω] 1, na
At VGS = 12V, TA = 25°C
ID max [A] 5.4
PD max [W] 70
QGS typ, max [nC] 2, na
QGD typ, max [nC] 1.4, na
QG Total typ, max [nC] 5.5, na
RthJA max [C/W] 62
RthJC max [C/W] 2.13
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=175°C, TA=25°C
1.0 (conservative)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 2.6 (realistic)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=175°C, TC=25°C
5.7 (ideal heatsink, Silicon Carbide (SiC) limit)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=175°C, TA=25°C
2.4 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C 15.0 (realistic)
PD [W] Calc. @RthJC max
TJ=175°C, TC=25°C
70.4 (ideal heatsink)

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BVDSS [V] Package RDS(ON) max [Ω] VTH [V] ID [A] PD [W] QG Total [nC] QGS [nC] QGD [nC]
1700 Through Hole
WxL: 15.94 x 20.95mm2
# of Pins: 3
Thermalpad: Bottom
0.58 3.5, 5.7 7.5 88 8.1 2.9 1.8
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0.85 2, 4 7 62 23 5.4 7.6
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WxL: 15.60 x 20.45mm2
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1 2.3, 4.2 7 79 12 3.8 5
1700 Through Hole
WxL: 15.95 x 21.00mm2
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1 8.4 79 19.8 3 12
1700 Through Hole
WxL: 15.94 x 22.54mm2
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1.05 2, 4 5.2 14 2.4 9.3
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