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Infineon IPP038N15NM6 is a Silicon MOSFET rated at 150V, 178A, 0.0036Ω Rdson(max) in PG-TO220-3



Device Parameter Value feedback*
Manufacturer Name Infineon
Manufacturer Package PG-TO220-3
(Through Hole, 3 Pins,
Thermalpad: Bottom
WxL: 10.00 x 15.65mm2)
Configuration Single
Channel N-Type
Material Silicon
BVDSS [V] 150
RDS(ON) typ, max [Ω] 0.0033, 0.0036
At VGS = 15V, TA = 25°C
ID max [A] 178
PD max [W] 294
QGS typ, max [nC] 27, 36
QGD typ, max [nC] 15.7, 24
QG Total typ, max [nC] 69, 86
RthJA max [C/W] 40
RthJC max [C/W] 0.51
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=175°C, TA=25°C
20.4 (conservative)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 40.8 (realistic)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=175°C, TC=25°C
180.8 (ideal heatsink, Silicon limit)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=175°C, TA=25°C
3.8 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C 15.0 (realistic)
PD [W] Calc. @RthJC max
TJ=175°C, TC=25°C
294.1 (ideal heatsink)

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BVDSS [V] Package RDS(ON) max [Ω] VTH [V] ID [A] PD [W] QG Total [nC] QGS [nC] QGD [nC]
150 Through Hole
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135 Through Hole
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0.0046 2, 4 206 429 70 20 10
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