Infineon IPT067N20NM6 is a Silicon MOSFET rated at 200V, 137A, 0.0062Ω Rdson(max) in PG-HSOF-8

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Infineon
Manufacturer Package	PG-HSOF-8 (Surface Mount, 8 Pins, Thermalpad: Bottom WxL: 9.80 x 11.68mm²)
Configuration	Single
Channel	N-Type
Material	Silicon
BVDSS [V]	200
RDS(ON) typ, max [Ω]	0.0057, 0.0067 At VGS = 10V, TA = 25°C
ID max [A]	137
PD max [W]	300
QGS typ, max [nC]	37, na
QGD typ, max [nC]	14, 21
QG Total typ, max [nC]	71, 107
RthJA max [C/W]	40
RthJC max [C/W]	0.5
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=175°C, TA=25°C	15.6 (conservative) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	31.1 (realistic) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=175°C, TC=25°C	139.1 (ideal heatsink, Silicon limit) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=175°C, TA=25°C	3.8 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C	15.0 (realistic)
PD [W] Calc. @RthJC max TJ=175°C, TC=25°C	300.0 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
200	Surface Mount WxL: 9.90 x 11.68mm² # of Pins: 8 Thermalpad: Bottom	0.0076	2.3, 4.3	160	359	176	65.3	34.8
200	Surface Mount WxL: 9.90 x 11.68mm² # of Pins: 8 Thermalpad: Bottom	0.0082	2, 4	360	316	129	48	37

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