Infineon IRF150P220 is a Silicon MOSFET rated at 150V, 316A, 0.0027Ω Rdson(max) in PG-TO247-3

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Infineon
Manufacturer Package	PG-TO247-3 (Through Hole, 3 Pins, Thermalpad: Bottom WxL: 15.94 x 20.95mm²)
Configuration	Single
Channel	N-Type
Material	Silicon
BVDSS [V]	150
RDS(ON) typ, max [Ω]	0.0023, 0.0027 At VGS = 10V, TA = 25°C
ID max [A]	316
PD max [W]	556
QGS typ, max [nC]	65, na
QGD typ, max [nC]	32, na
QG Total typ, max [nC]	160, 200
RthJA max [C/W]	40
RthJC max [C/W]	0.27
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=175°C, TA=25°C	23.6 (conservative) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	47.1 (realistic) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=175°C, TC=25°C	286.9 (ideal heatsink, Silicon limit) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=175°C, TA=25°C	3.8 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C	15.0 (realistic)
PD [W] Calc. @RthJC max TJ=175°C, TC=25°C	555.6 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
150	Through Hole WxL: 15.62 x 20.57mm² # of Pins: 3 Thermalpad: Bottom	0.0028	2, 4	366	833	138	44	20
150	Through Hole WxL: 15.94 x 21.07mm² # of Pins: 3 Thermalpad: Bottom	0.003	2.5, 4.5	400	1250	365	103	87
150	Through Hole WxL: 15.94 x 21.07mm² # of Pins: 3 Thermalpad: Bottom	0.0031	2.5, 4.5	400	1500	430	100	100
150	Through Hole WxL: 15.80 x 20.95mm² # of Pins: 3 Thermalpad: Bottom	0.0032	2, 4	330	637	157.8	59.8	33.4

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