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Infineon IRF5210 is a Silicon MOSFET rated at -100V, -29A, 0.06Ω Rdson(max) in TO220



Device Parameter Value feedback*
Manufacturer Name Infineon
Manufacturer Package TO220
(Through Hole, 3 Pins,
Thermalpad: Bottom
WxL: 10.16 x 15.37mm2)
Configuration Single
Channel P-Type
Material Silicon
BVDSS [V] -100
RDS(ON) typ, max [Ω] na, 0.06
At VGS = -10V, TA = 25°C
ID max [A] -29
PD max [W] 200
QGS typ, max [nC] na, 25
QGD typ, max [nC] na, 97
QG Total typ, max [nC] na, 180
RthJA max [C/W] 62
RthJC max [C/W] 0.75
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=175°C, TA=25°C
4.0 (conservative)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 10.0 (realistic)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=175°C, TC=25°C
36.5 (ideal heatsink, Silicon limit)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=175°C, TA=25°C
2.4 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C 15.0 (realistic)
PD [W] Calc. @RthJC max
TJ=175°C, TC=25°C
200.0 (ideal heatsink)

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0.055 -1, -3 -26 136 125 21 45
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WxL: 10.08 x 15.60mm2
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