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Toshiba TJ20A10M3 is a Silicon MOSFET rated at -100V, -20A, 0.09Ω Rdson(max) in TO-220SIS



Device Parameter Value feedback*
Manufacturer Name Toshiba
Manufacturer Package TO-220SIS
(Through Hole, 3 Pins,
Thermalpad: None
WxL: 10.00 x 15.00mm2)
Configuration Single
Channel P-Type
Material Silicon
BVDSS [V] -100
RDS(ON) typ, max [Ω] 0.063, 0.09
At VGS = -10V, TA = 25°C
ID max [A] -20
PD max [W] 35
QGS typ, max [nC] na, na
QGD typ, max [nC] 32, na
QG Total typ, max [nC] 120, na
RthJA max [C/W] 62.5
RthJC max [C/W] 3.57
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=150°C, TA=25°C
3.3 (conservative)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 8.3 (realistic)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=150°C, TC=25°C
13.9 (ideal heatsink, Silicon limit)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=150°C, TA=25°C
2.0 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C 12.5 (realistic)
PD [W] Calc. @RthJC max
TJ=150°C, TC=25°C
35.0 (ideal heatsink)

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