EPC EPC2014C is a Gallium Nitride (GaN) FET rated at 40V, 10A, 0.016Ω Rdson(max) in LGA 1.7 x 1.1

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	EPC
Manufacturer Package	LGA 1.7 x 1.1 (Die, 4 Pins, Thermalpad: None WxL: 1.12 x 1.42mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	40
RDS(ON) typ, max [Ω]	0.012, 0.016 At VGS = 5V, TA = 25°C
ID max [A]	10
PD max [W]	na
QGS typ, max [nC]	0.7, na
QGD typ, max [nC]	0.3, 0.5
QG Total typ, max [nC]	2, 2.5
RthJA max [C/W]	80
RthJC max [C/W]	3.6
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	7.0 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	19.8 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	32.9 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	1.6 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	34.7 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
40	DIE WxL: 1.09 x 1.70mm² # of Pins: 5 Thermalpad: None	0.0145	0.8, 2.5	10		2.9	1	0.4

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