Loading...

EPC EPC2016C is a Gallium Nitride (GaN) FET rated at 100V, 18A, 0.016Ω Rdson(max) in LGA 2.1 x 1.6



Device Parameter Value feedback*
Manufacturer Name EPC
Manufacturer Package LGA 2.1 x 1.6
(Die, 15 Pins,
Thermalpad: None
WxL: 1.25 x 2.15mm2)
Configuration Single
Channel N-Type
Material Gallium Nitride (GaN)
BVDSS [V] 100
RDS(ON) typ, max [Ω] 0.012, 0.016
At VGS = 5V, TA = 0°C
ID max [A] 18
PD max [W] na
QGS typ, max [nC] 1.1, na
QGD typ, max [nC] 0.55, 1
QG Total typ, max [nC] 3.4, 4.5
RthJA max [C/W] 69
RthJC max [C/W] 2
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=150°C, TA=25°C
0.0 (conservative)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 0.0 (realistic)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=150°C, TC=25°C
0.0 (ideal heatsink, Gallium Nitride (GaN) limit)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=150°C, TA=25°C
1.8 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C 12.5 (realistic)
PD [W] Calc. @RthJC max
TJ=150°C, TC=25°C
62.5 (ideal heatsink)

Similar Products

We did not find other products similar to this part.
Additional Resources