Device Parameter | Value feedback* | |
Manufacturer Name | EPC | |
Manufacturer Package | BGA 1.5x1.5 (Die, 4 Pins, Thermalpad: None WxL: 1.30 x 1.30mm2) |
|
Configuration | Single | |
Channel | N-Type | |
Material | Gallium Nitride (GaN) | |
BVDSS [V] | 80 | |
RDS(ON) typ, max [Ω] | 0.008, 0.011 At VGS = 5V, TA = 25°C |
|
ID max [A] | 8.2 | |
PD max [W] | na | |
QGS typ, max [nC] | 1, na | |
QGD typ, max [nC] | 0.5, na | |
QG Total typ, max [nC] | 3.5, 4.3 | |
RthJA max [C/W] | 95 | |
RthJC max [C/W] | 1.6 | |
DiscoverEE Calculated Values | ||
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C |
7.7 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C |
|
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C | 23.8 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
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ID [A] Calc. @RthJC max TJ=150°C, TC=25°C |
59.6 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C |
|
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C |
1.3 (conservative) | |
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C | 12.5 (realistic) | |
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C |
78.1 (ideal heatsink) |