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EPC EPC2252 is a Gallium Nitride (GaN) FET rated at 80V, 8.2A, 0.011Ω Rdson(max) in BGA 1.5x1.5



Device Parameter Value feedback*
Manufacturer Name EPC
Manufacturer Package BGA 1.5x1.5
(Die, 4 Pins,
Thermalpad: None
WxL: 1.30 x 1.30mm2)
Configuration Single
Channel N-Type
Material Gallium Nitride (GaN)
BVDSS [V] 80
RDS(ON) typ, max [Ω] 0.008, 0.011
At VGS = 5V, TA = 25°C
ID max [A] 8.2
PD max [W] na
QGS typ, max [nC] 1, na
QGD typ, max [nC] 0.5, na
QG Total typ, max [nC] 3.5, 4.3
RthJA max [C/W] 95
RthJC max [C/W] 1.6
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=150°C, TA=25°C
7.7 (conservative)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 23.8 (realistic)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=150°C, TC=25°C
59.6 (ideal heatsink, Gallium Nitride (GaN) limit)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=150°C, TA=25°C
1.3 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C 12.5 (realistic)
PD [W] Calc. @RthJC max
TJ=150°C, TC=25°C
78.1 (ideal heatsink)

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