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EPC EPC2305 is a Gallium Nitride (GaN) FET rated at 150V, 80A, 0.0022Ω Rdson(typ) in QFN 3 x 5



Device Parameter Value feedback*
Manufacturer Name EPC
Manufacturer Package QFN 3 x 5
(Surface Mount, 7 Pins,
Thermalpad: None
WxL: 3.00 x 5.00mm2)
Configuration Single
Channel N-Type
Material Gallium Nitride (GaN)
BVDSS [V] 150
RDS(ON) typ, max [Ω] 0.0022, na
At VGS = 5V, TA = 25°C
ID max [A] 80
PD max [W] na
QGS typ, max [nC] 6.3, na
QGD typ, max [nC] 2.6, na
QG Total typ, max [nC] 21, na
RthJA max [C/W] 45
RthJC max [C/W] 0.2
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=150°C, TA=25°C
0.0 (conservative)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 0.0 (realistic)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=150°C, TC=25°C
0.0 (ideal heatsink, Gallium Nitride (GaN) limit)
Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=150°C, TA=25°C
2.8 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C 12.5 (realistic)
PD [W] Calc. @RthJC max
TJ=150°C, TC=25°C
625.0 (ideal heatsink)

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