EPC EPC2619 is a Gallium Nitride (GaN) FET rated at 100V, 29A, 0.0042Ω Rdson(max) in LGA 2.5 x 1.5

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	EPC
Manufacturer Package	LGA 2.5 x 1.5 (Die, 6 Pins, Thermalpad: None WxL: 1.50 x 2.50mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	100
RDS(ON) typ, max [Ω]	0.0033, 0.0042 At VGS = 5V, TA = 25°C
ID max [A]	29
PD max [W]	na
QGS typ, max [nC]	2.2, na
QGD typ, max [nC]	1, na
QG Total typ, max [nC]	8.5, 10.3
RthJA max [C/W]	66
RthJC max [C/W]	1
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	15.0 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	38.6 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	122.0 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	1.9 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	125.0 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
100	DIE WxL: 1.45 x 2.30mm² # of Pins: 35 Thermalpad: None	0.0052	0.8, 2.5	46		9.3	2.8	0.7

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