Anbonsemi AT95N08S-Q1 is a Silicon MOSFET rated at 80V, 95A, 0.008Ω Rdson(max) in TO-220AB

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Anbonsemi
Manufacturer Package	TO-220AB (Through Hole, 3 Pins, Thermalpad: Bottom WxL: 10.08 x 15.60mm²)
Configuration	Single
Channel	N-Type
Material	Silicon
BVDSS [V]	80
RDS(ON) typ, max [Ω]	0.0066, 0.008 At VGS = 10V, TA = 25°C
ID max [A]	95
PD max [W]	170
QGS typ, max [nC]	35.1, na
QGD typ, max [nC]	25.8, na
QG Total typ, max [nC]	109, na
RthJA max [C/W]	na
RthJC max [C/W]	0.88
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	28.0 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	94.2 (ideal heatsink, Silicon limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	na
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	142.0 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
75	Through Hole WxL: 10.00 x 15.65mm² # of Pins: 3 Thermalpad: Bottom	0.0052	2, 4	80	150	69	25	24
80	Through Hole WxL: 10.00 x 15.65mm² # of Pins: 3 Thermalpad: Bottom	0.0055	2, 4	80	150	70	24	24
75	Through Hole WxL: 10.00 x 15.65mm² # of Pins: 3 Thermalpad: Bottom	0.0065	1.2, 2	100	300	246	25	124
75	Through Hole WxL: 10.00 x 15.65mm² # of Pins: 3 Thermalpad: Bottom	0.0068	1.2, 2	80	300	233	23	83
75	Through Hole WxL: 10.00 x 15.65mm² # of Pins: 3 Thermalpad: Bottom	0.0068	2.1, 4	100	300	200	33	120
75	Through Hole WxL: 10.00 x 15.65mm² # of Pins: 3 Thermalpad: Bottom	0.0071	2.1, 4	80	300	180	37	116
80	Through Hole WxL: 10.10 x 14.90mm² # of Pins: 3 Thermalpad: Bottom	0.009	1.2, 2.5	72	62.5	35	6	8

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