Navitassemi NV6156 is a Gallium Nitride (GaN) FET rated at 800V, 8A, 0.238Ω Rdson(max) in QFN 5 x 6

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Navitassemi
Manufacturer Package	QFN 5 x 6 (Surface Mount, 8 Pins, Thermalpad: Bottom WxL: 5.00 x 6.00mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	800
RDS(ON) typ, max [Ω]	0.17, 0.238 At VGS = 5V, TA = 25°C
ID max [A]	8
PD max [W]	na
QGS typ, max [nC]	na, na
QGD typ, max [nC]	na, na
QG Total typ, max [nC]	na, na
RthJA max [C/W]	40
RthJC max [C/W]	1.9
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	2.6 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	5.1 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	11.8 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	3.1 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	65.8 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
800	Surface Mount WxL: x mm² # of Pins: Thermalpad: None	0.168		12
800	Surface Mount WxL: x mm² # of Pins: Thermalpad: None	0.17		12
800	Surface Mount WxL: 5.00 x 6.00mm² # of Pins: 8 Thermalpad: Bottom	0.17	1, 2.8	13		2.6	0.4	0.7
800	Surface Mount WxL: 5.00 x 6.00mm² # of Pins: 8 Thermalpad: Bottom	0.19	1, 2.6	8	57	2.4	0.5	0.6
800	Surface Mount WxL: 5.00 x 6.00mm² # of Pins: 8 Thermalpad: Bottom	0.24		8
800	Surface Mount WxL: 5.02 x 6.05mm² # of Pins: 8 Thermalpad: Bottom	0.24		25	112	17.6	3.7	7

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