UnitedSiC UF3C065080K3S is a Silicon Carbide (SiC) FET rated at 650V, 31A, 0.1Ω Rdson(max) in TO-247-3L

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	UnitedSiC
Manufacturer Package	TO-247-3L (Through Hole, 3 Pins, Thermalpad: Bottom WxL: 15.88 x 21.13mm²)
Configuration	Single Cascode
Channel	N-Type
Material	Silicon Carbide (SiC)
BVDSS [V]	650
RDS(ON) typ, max [Ω]	0.08, 0.1 At VGS = 12V, TA = 25°C
ID max [A]	31
PD max [W]	190
QGS typ, max [nC]	19, na
QGD typ, max [nC]	11, na
QG Total typ, max [nC]	51, na
RthJA max [C/W]	na
RthJC max [C/W]	0.79
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=175°C, TA=25°C	na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	7.7 (realistic) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=175°C, TC=25°C	27.6 (ideal heatsink, Silicon Carbide (SiC) limit) Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=175°C, TA=25°C	na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C	na
PD [W] Calc. @RthJC max TJ=175°C, TC=25°C	189.9 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
650	Through Hole WxL: 15.88 x 21.13mm² # of Pins: 4 Thermalpad: Bottom	0.1	4, 6	31	190	43	19	11
650	Through Hole WxL: 15.88 x 21.13mm² # of Pins: 3 Thermalpad: Bottom	0.1	4, 6	31	190	51	19	11
650	Through Hole WxL: 15.90 x 20.45mm² # of Pins: 3 Thermalpad: Bottom	0.114	3.5, 4.8	21	107	4.9	2.3	0.8

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