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UnitedSiC UF3C120400B7S is a Silicon Carbide (SiC) FET rated at 1200V, 7.6A, 0.515Ω Rdson(max) in D2PAK-7L



Device Parameter Value feedback*
Manufacturer Name UnitedSiC
Manufacturer Package D2PAK-7L
(Surface Mount, 7 Pins,
Thermalpad: None
WxL: 10.18 x 15.50mm2)
Configuration Single Cascode
Channel N-Type
Material Silicon Carbide (SiC)
BVDSS [V] 1200
RDS(ON) typ, max [Ω] 0.41, 0.515
At VGS = 12V, TA = 25°C
ID max [A] 7.6
PD max [W] 100
QGS typ, max [nC] 5.5, na
QGD typ, max [nC] 6, na
QG Total typ, max [nC] 22.5, na
RthJA max [C/W] na
RthJC max [C/W] 1.5
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=175°C, TA=25°C
na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 3.4 (realistic)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=175°C, TC=25°C
8.8 (ideal heatsink, Silicon Carbide (SiC) limit)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=175°C, TA=25°C
na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C na
PD [W] Calc. @RthJC max
TJ=175°C, TC=25°C
100.0 (ideal heatsink)

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