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HestiaPower P1M120HB007P66 is a Silicon Carbide (SiC) FET rated at 1200V, 325A, 0.009Ω Rdson(max) in

Datasheet


Device Parameter Value feedback*
Manufacturer Name HestiaPower
Manufacturer Package
(, Pins,
Thermalpad: None
WxL: x mm2)
Configuration Single
Channel N-Type
Material Silicon Carbide (SiC)
BVDSS [V] 1200
RDS(ON) typ, max [Ω] 0.007, 0.009
At VGS = 20V, TA = 25°C
ID max [A] 325
PD max [W] 1764
QGS typ, max [nC] 261, na
QGD typ, max [nC] 576, na
QG Total typ, max [nC] 1161, na
RthJA max [C/W] na
RthJC max [C/W] 0.085
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max
TJ=175°C, TA=25°C 		na
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C 25.8 (realistic)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max
TJ=175°C, TC=25°C 		280.1 (ideal heatsink, Silicon Carbide (SiC) limit)
Approx. value as we assume RDS(on)max @ 175 °C = 2.5x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max
TJ=175°C, TA=25°C 		na
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=175°C, TA=25°C na
PD [W] Calc. @RthJC max
TJ=175°C, TC=25°C 		1,764.7 (ideal heatsink)

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BVDSS [V] Package RDS(ON) max [Ω] VTH [V] ID [A] PD [W] QG Total [nC] QGS [nC] QGD [nC]
1200
WxL: x mm2
# of Pins:
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WxL: x mm2
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WxL: x mm2
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WxL: x mm2
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1200
WxL: x mm2
# of Pins:
Thermalpad: None		 0.0075 380 1456 1830 548 529
1200 Through Hole
WxL: 15.90 x 21.10mm2
# of Pins: 3
Thermalpad: Bottom		 0.0099 3.5, 5.2 225 750 220 72 64
1200 Through Hole
WxL: 15.80 x 21.00mm2
# of Pins: 4
Thermalpad: Bottom		 0.0099 3.5, 5.2 225 750 220 72 64
1200
WxL: x mm2
# of Pins:
Thermalpad: None		 0.01 252 937 1220 365 353
1200
WxL: x mm2
# of Pins:
Thermalpad: None		 0.01 435 1500 1220 365 353
1200 Surface Mount
WxL: 15.00 x 20.96mm2
# of Pins: 22
Thermalpad: None		 0.0104 3.5, 5.1 403 1500 348 76 86
1200 Through Hole
WxL: 25.70 x 38.10mm2
# of Pins: 4
Thermalpad: None		 0.012 266 750 560 314 149
1200 Through Hole
WxL: 25.70 x 38.10mm2
# of Pins: 4
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