| Device Parameter | Value feedback* | |
| Manufacturer Name | EPC | |
| Manufacturer Package | BGA 6.05 x 2.3 (Die, 75 Pins, Thermalpad: None WxL: 2.30 x 6.05mm2) |
|
| Configuration | Dual HalfBridge | |
| Channel | N-Type | |
| Material | Gallium Nitride (GaN) | |
| BVDSS [V] | 60 | |
| RDS(ON) typ, max [Ω] | 0.0084, 0.0115 At VGS = 5V, TA = 0°C |
|
| ID max [A] | 10 | |
| PD max [W] | na | |
| QGS typ, max [nC] | 1.1, na | |
| QGD typ, max [nC] | 0.5, na | |
| QG Total typ, max [nC] | 3.3, 4.3 | |
| RthJA max [C/W] | 42 | |
| RthJC max [C/W] | 0.4 | |
| DiscoverEE Calculated Values | ||
| ID [A] Calc. @RthJA max TJ=150°C, TA=25°C |
0.0 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C |
|
| ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C | 0.0 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
|
|
| ID [A] Calc. @RthJC max TJ=150°C, TC=25°C |
0.0 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C |
|
| PD [W] Calc. @RthJA max TJ=150°C, TA=25°C |
3.0 (conservative) | |
| PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C | 12.5 (realistic) | |
| PD [W] Calc. @RthJC max TJ=150°C, TC=25°C |
312.5 (ideal heatsink) | |
Datasheet