Innoscience INN040W120A is a Gallium Nitride (GaN) FET rated at 40V, 10A, 0.012Ω Rdson(max) in WLCSP 1.2x1.7

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Innoscience
Manufacturer Package	WLCSP 1.2x1.7 (Surface Mount, 12 Pins, Thermalpad: None WxL: 1.20 x 1.70mm²)
Configuration	Single Bi-Directional
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	40
RDS(ON) typ, max [Ω]	0.009, 0.012
ID max [A]	10
PD max [W]	na
QGS typ, max [nC]	na, na
QGD typ, max [nC]	0.9, na
QG Total typ, max [nC]	7.2, na
RthJA max [C/W]	67.35
RthJC max [C/W]	1.4
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	8.8 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	22.8 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	61.0 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	1.9 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	89.3 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
40	Surface Mount WxL: 1.20 x 1.70mm² # of Pins: 12 Thermalpad: None	0.012	0.8, 2.4	10	11	7.2	0.9	3.9

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