Innoscience INN100FQ016A is a Gallium Nitride (GaN) FET rated at 100V, 100A, 0.0018Ω Rdson(max) in FCQFN 6x4

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Innoscience
Manufacturer Package	FCQFN 6x4 (Surface Mount, 27 Pins, Thermalpad: None WxL: 4.00 x 6.00mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	100
RDS(ON) typ, max [Ω]	0.0014, 0.0018 At VGS = 5V, TA = 25°C
ID max [A]	100
PD max [W]	na
QGS typ, max [nC]	4.5, na
QGD typ, max [nC]	4.5, na
QG Total typ, max [nC]	22, na
RthJA max [C/W]	59.05
RthJC max [C/W]	8.78
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	24.2 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	58.9 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	62.9 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	2.1 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	14.2 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
100	Surface Mount WxL: 4.00 x 6.00mm² # of Pins: 25 Thermalpad: None	0.0018	0.8, 2.5	100		22	4.5	4.5
100	Surface Mount WxL: 4.00 x 6.00mm² # of Pins: 25 Thermalpad: None	0.0018	0.8, 2.5	100	65	22	4.5	4.5

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