Innoscience INN100FQ025A is a Gallium Nitride (GaN) FET rated at 100V, 80A, 0.0028Ω Rdson(max) in FCQFN 3x5

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Innoscience
Manufacturer Package	FCQFN 3x5 (Surface Mount, 20 Pins, Thermalpad: None WxL: 3.00 x 5.00mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	100
RDS(ON) typ, max [Ω]	0.0022, 0.0028 At VGS = 5V, TA = 25°C
ID max [A]	80
PD max [W]	na
QGS typ, max [nC]	2.8, na
QGD typ, max [nC]	3, na
QG Total typ, max [nC]	14, na
RthJA max [C/W]	61.06
RthJC max [C/W]	14.15
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	19.1 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	47.2 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	39.7 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	2.0 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	8.8 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
100	Surface Mount WxL: 3.00 x 5.00mm² # of Pins: 20 Thermalpad: None	0.0028	0.8, 2.5	80		14	2.8	3
100	Surface Mount WxL: 3.00 x 5.00mm² # of Pins: 6 Thermalpad: None	0.0033	1.2, 2.9	75	45	11	3	3.4

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