Innoscience INN100W027A is a Gallium Nitride (GaN) FET rated at 100V, 64A, 0.0027Ω Rdson(max) in WLCSP 4.45x2.3

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Innoscience
Manufacturer Package	WLCSP 4.45x2.3 (Surface Mount, 22 Pins, Thermalpad: None WxL: 2.30 x 4.45mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	100
RDS(ON) typ, max [Ω]	0.0021, 0.0027 At VGS = 5V, TA = 25°C
ID max [A]	64
PD max [W]	na
QGS typ, max [nC]	2.8, na
QGD typ, max [nC]	2.5, na
QG Total typ, max [nC]	13, na
RthJA max [C/W]	52.43
RthJC max [C/W]	0.22
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	21.0 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	48.1 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	324.4 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	2.4 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	568.2 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
100	Surface Mount WxL: 2.88 x 3.23mm² # of Pins: 114 Thermalpad: None	0.002	0.8, 2.5	126		29	6.7	2
100	Surface Mount WxL: 2.30 x 4.45mm² # of Pins: 20 Thermalpad: None	0.0027	0.8, 2.5	64	470	13	2.8	2.5
100	Surface Mount WxL: 3.30 x 3.30mm² # of Pins: 9 Thermalpad: Bottom	0.0035	0.8, 2.1	201		7.6	1.6	1.5

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