| Device Parameter | Value feedback* | |
| Manufacturer Name | Innoscience | |
| Manufacturer Package | Bare (4.115x1.570) (Die, 8 Pins, Thermalpad: None WxL: 1.57 x 4.12mm2) |
|
| Configuration | Single | |
| Channel | N-Type | |
| Material | Gallium Nitride (GaN) | |
| BVDSS [V] | 650 | |
| RDS(ON) typ, max [Ω] | 0.106, 0.14 At VGS = 6V, TA = 25°C |
|
| ID max [A] | 17 | |
| PD max [W] | 113 | |
| QGS typ, max [nC] | 0.3, na | |
| QGD typ, max [nC] | 1.2, na | |
| QG Total typ, max [nC] | 3.5, na | |
| RthJA max [C/W] | na | |
| RthJC max [C/W] | na | |
| DiscoverEE Calculated Values | ||
| ID [A] Calc. @RthJA max TJ=155°C, TA=25°C |
na |
|
| ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C | 6.8 (realistic) Approx. value as we assume RDS(on)max @ 155 °C = 2x RDS(on)max @ 25 °C
|
|
| ID [A] Calc. @RthJC max TJ=155°C, TC=25°C |
na |
|
| PD [W] Calc. @RthJA max TJ=155°C, TA=25°C |
na | |
| PD [W] Calc. @ System RthJA = 10 °C/W, TJ=155°C, TA=25°C | na | |
| PD [W] Calc. @RthJC max TJ=155°C, TC=25°C |
na | |
Datasheet