| Device Parameter | Value feedback* | |
| Manufacturer Name | Innoscience | |
| Manufacturer Package | Bare Die (2.033x1.247) (Die, 4 Pins, Thermalpad: None WxL: 1.25 x 2.03mm2) |
|
| Configuration | Single | |
| Channel | N-Type | |
| Material | Gallium Nitride (GaN) | |
| BVDSS [V] | 650 | |
| RDS(ON) typ, max [Ω] | 0.27, 0.35 At VGS = 6V, TA = 25°C |
|
| ID max [A] | 6 | |
| PD max [W] | na | |
| QGS typ, max [nC] | 0.15, na | |
| QGD typ, max [nC] | 0.5, na | |
| QG Total typ, max [nC] | 1.5, na | |
| RthJA max [C/W] | na | |
| RthJC max [C/W] | na | |
| DiscoverEE Calculated Values | ||
| ID [A] Calc. @RthJA max TJ=150°C, TA=25°C |
na |
|
| ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C | 4.2 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
|
|
| ID [A] Calc. @RthJC max TJ=150°C, TC=25°C |
na |
|
| PD [W] Calc. @RthJA max TJ=150°C, TA=25°C |
na | |
| PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C | na | |
| PD [W] Calc. @RthJC max TJ=150°C, TC=25°C |
na | |
Datasheet