Innoscience INN900D350B is a Gallium Nitride (GaN) FET rated at 900V, 6A, 0.35Ω Rdson(max) in DFN 8X8

Datasheet

Device Parameter	Value feedback*
Manufacturer Name	Innoscience
Manufacturer Package	DFN 8X8 (Surface Mount, 8 Pins, Thermalpad: Bottom WxL: 8.00 x 8.00mm²)
Configuration	Single
Channel	N-Type
Material	Gallium Nitride (GaN)
BVDSS [V]	900
RDS(ON) typ, max [Ω]	0.265, 0.35 At VGS = 6V, TA = 25°C
ID max [A]	6
PD max [W]	59
QGS typ, max [nC]	0.12, na
QGD typ, max [nC]	0.5, na
QG Total typ, max [nC]	1.5, na
RthJA max [C/W]	67
RthJC max [C/W]	2.11
DiscoverEE Calculated Values
ID [A] Calc. @RthJA max TJ=150°C, TA=25°C	1.6 (conservative) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @ System RthJA = °C/W, TJ=°C, TA=25°C	4.2 (realistic) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
ID [A] Calc. @RthJC max TJ=150°C, TC=25°C	9.2 (ideal heatsink, Gallium Nitride (GaN) limit) Approx. value as we assume RDS(on)max @ 150 °C = 2x RDS(on)max @ 25 °C
PD [W] Calc. @RthJA max TJ=150°C, TA=25°C	1.9 (conservative)
PD [W] Calc. @ System RthJA = 10 °C/W, TJ=150°C, TA=25°C	12.5 (realistic)
PD [W] Calc. @RthJC max TJ=150°C, TC=25°C	59.2 (ideal heatsink)

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BV_DSS [V]	Package	R_DS(ON) max [Ω]	V_TH [V]	I_D [A]	P_D [W]	Q_{G Total} [nC]	Q_GS [nC]	Q_GD [nC]
900	Surface Mount WxL: 6.60 x 10.10mm² # of Pins: 3 Thermalpad: Bottom	0.35	1.2, 2.5	6	60	1.5	0.12	0.5
950	Surface Mount WxL: 6.50 x 9.98mm² # of Pins: 3 Thermalpad: Bottom	0.45	2.5, 3.5	13.3	104	43	6	13
950	Surface Mount WxL: 6.50 x 9.98mm² # of Pins: 3 Thermalpad: Bottom	0.45	2.5, 3.5	14	104	35	5	11

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